Samsung today announced a new SSD, the world's first to use the new memory architecture "toggle-mode DDR NAND. Combined with a new chip manufacturing process, this innovation has allowed the design of a DSS 512 GB high performance and power consumption similar to that of a model with a capacity twice as low.
The new architecture promises a leap of performance of 50% in writing and 125% in reading, including using a new type of interface DDR (double data rate). The new SSD delivers and sequential transfer rates of 250 MB per second read and 220 MB per second write. It is therefore limited to a Serial ATA 3 Gbps, it still fails to saturate.
The 32 Gb NAND chips each pass on their 40-nm on the previous model, only 30 nm again. The controller supports the TRIM function, which enables Windows 7 to erase the cells as they are released to accelerate their writing later. Finally he offers AES 256-bit hardware.
Samsung did not provide any price or launch date for its new 512 GB SSD, just know that it plans to start mass production next month.
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